参数资料
型号: MRF6S18060NBR1
厂商: Freescale Semiconductor
文件页数: 4/21页
文件大小: 763K
描述: MOSFET RF N-CH 26V 60W TO272-4
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: LDMOS
频率: 1.81GHz ~ 1.88GHz
增益: 15dB
电压 - 测试: 26V
额定电流: 10µA
电流 - 测试: 450mA
功率 - 输出: 25W
电压 - 额定: 68V
封装/外壳: TO-272BB
供应商设备封装: TO-272 WB-4
包装: 带卷 (TR)
12
RF Device Data
Freescale Semiconductor
MRF6S18060NR1 MRF6S18060NBR1
TYPICAL CHARACTERISTICS ? 1800 MHz
?50
?60
?65
?70
?75
1780
?80
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
1800 1820 1840 1860
Pout= 35 W Avg.
25 W Avg.
15 W Avg.
35 W Avg.
25 W Avg.
10 W Avg.
SR @ 400 kHz
SR @ 600 kHz
?55
1880 1900 1920
TC
= 25
C
?75
?45
0
Pout, OUTPUT POWER (WATTS) AVG.
?50
?55
?60
?65
?70
10
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
20 30 40 50 60
TC
= 25
C
?85
?60
0
Pout, OUTPUT POWER (WATTS) AVG.
?70
?75
?80
10
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 600 kHz (dBc)
20 30 40 50 60
?65
f, FREQUENCY (MHz)
VDD
= 26 Vdc
IDQ
= 450 mA
EDGE Modulation
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
VDD
= 26 Vdc
IDQ
= 450 mA
f = 1960 MHz
EDGE Modulation
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相关代理商/技术参数
参数描述
MRF6S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NBR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1 功能描述:射频MOSFET电源晶体管 1990MHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18100NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs