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参数资料
| 型号： | MRF6P23190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 431K |
| 描述： | MOSFET RF N-CHAN 28V 40W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.9A |
| 功率 - 输出： | 40W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD
= 28 Vdc, I
D
= 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage (1)
(VGS
= 10 Vdc, I
D
= 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.5
?
pF
Functional Tests (3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1900 mA, P
out
= 40 W Avg., f = 2390 MHz, 2-Carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14
16
dB
Drain Efficiency
ηD
22
23.5
?
%
Intermodulation Distortion
IM3
?
-37.5
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-41
-38
dBc
Input Return Loss
IRL
?
-13
?
dB
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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