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参数资料
| 型号： | MRF6P23190HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/11页 |
| 文件大小： | 431K |
| 描述： | MOSFET RF N-CHAN 28V 40W NI-1230 |
| 产品变化通告： | RF Devices Discontinuation 28/Jun/2011 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS |
| 频率： | 2.39GHz |
| 增益： | 14dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.9A |
| 功率 - 输出： | 40W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 带卷 (TR) |
6
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
TYPICAL CHARACTERISTICS
400
11
17
1
0
60
Pout, OUTPUT POWER (WATTS) CW
10
16
14
12
50
C
40
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
13
VDD
= 28 Vdc
IDQ
= 1900 mA
f = 2350 MHz
ηD
Gps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
0
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 190 W (PEP)
IDQ
= 1900 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
?20
?30
?40
?50
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
?55
Pout, OUTPUT POWER (WATTS) AVG.
36
?25
?35
24
18
?40
6
10 200100
?45
47
63
P3dB = 55.1 dBm (325.54 W)
Pin, INPUT POWER (dBm)
VDD
= 28 Vdc, I
DQ
= 1900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
59
55
51
49
37 4339
41
Actual
Ideal
61
57
53
35
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
IM3
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
VDD
= 24 V
300
10
15
0
12
11
50
13
14
IDQ
= 1900 mA
f = 2350 MHz
30
?50
ηD
ACPR
28
V
32
V
45
1
C
?30
100 150 200
10
20
12
?30
TC
= ?30
C
85C
25C
TC
= ?30
C
85C
25C
85
?30C
?30C
C
25C
85
100
250
VDD= 28 Vdc, IDQ
= 1900 mA
f1 = 2345 MHz, f2 = 2355 MHz
2?Carrier W?CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
25C
?10
49
P6dB = 55.73 dBm (374.11 W)
P1dB = 54.5 dBm (283.85 W)
85C
65
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相关代理商/技术参数 |
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|---|---|
| MRF6P24190HR5 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6 | 功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P24190HR6_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF6P27160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P27160H_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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