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参数资料
| 型号： | MRF6402 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 153K |
| 代理商： | MRF6402 |
1
MRF6402
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
The MRF6402 is designed for 1.8 GHz Personal Communications Network
(PCN) base stations applications. It incorporates high value emitter ballast
resistors, gold metallizations and offers a high degree of reliability and
ruggedness. For ease of design, this transistor has an internally matched input.
To be used in Class AB for PCN and Cellular Radio Applications
Specified 26 V, 1.88 GHz Characteristics
Output Power — 4.5 Watts
Gain — 10 dB Typ
Efficiency — 45% Typ
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCER
VCBO
VEBO
IC
PD
40
Vdc
Collector–Base Voltage
45
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector–Current — Continuous
0.7
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
15
0.2
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75
)
Emitter–Base Breakdown Voltage
(IE = 5 mAdc)
Collector–Base Breakdown Voltage (IC = 10 mAdc)
Collector–Emitter Leakage (VCE = 26 V, RBE = 75
)
(1) Thermal resistance is determined under specified RF operating condition.
V(BR)CER
40
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
V(BR)CBO
ICER
40
—
—
Vdc
—
—
5
mA
(continued)
Order this document
by MRF6402/D
SEMICONDUCTOR TECHNICAL DATA
4.5 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
REV 7
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