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参数资料
| 型号： | MRF6402 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 3/4页 |
| 文件大小： | 153K |
| 代理商： | MRF6402 |
3
MRF6402
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
24 V
f = 1.88 GHz
ICQ = 40 mA
VCE = 26 V
I
Pout, Output Power (Watts) PEP
0.1
Pin, Input Power (Watts)
Figure 2. Typical Output Power
versus Input Power
Po
Figure 3. IMD versus Output Power
3
0.3
0
– 30
– 70
0
2
4
6
0.2
1
2
5
6
4
0.4
0.5
0.6
– 60
– 50
– 40
– 20
– 10
1
3
5
7th
5th
VCE = 26 V
f1 = 1.88
f2 = 1.8801 GHz
ICQ = 40 mA
3rd Order
R1
C8
RF Input
RF Output
C4
C2
C1
C3
C6
L1
L2
C11
C10
R4
P1
R3
C5
C9
C7
R2
D2
D1
T
Figure 4. 1.80–1.88 GHz Test Circuit Electrical Schematic
00
C1, C2
C3, C4
C5, C6
C7, C8
C9, C10
C11
D1, D2
1 to 5 pF, Trimmer Capacitor, Johanson
100A, 68 pF, Chip Capacitor, ATC
100A, 82 pF, Chip Capacitor, ATC
15 nF, Chip Capacitor, 0805
330 pF, Chip Capacitor, 0805
4.7
μ
F, 35 V, Capacitor
Diode, 1N4148
L1
L2
P1
R1
R2
R3
R4
T
2 Turns, Wire 0.5 mm, ID 2 mm
Ferrite Bead, SMD Fair–Rite
10 k
, Trimmer
2.2
,
Chip Resistor, 0805
56
, Chip Resistor, 1206
1.2 k
, 1/4 W, 5%, Resistor
100
, 3 W, Power Resistor
Transistor, BD135
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