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参数资料
| 型号： | MRF6409 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | CASE 319-07, 6 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 273K |
| 代理商： | MRF6409 |
MRF6409
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
18
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
Gpe
10
11
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
η
50
60
—
%
Load Mismatch
(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
Ψ
No Degradation in Output Power
Figure 1. Test Circuit Electrical Schematic
R1
C11
RF INPUT
RF OUTPUT
C5
C1
C3
C10
P1
R3
C6
C8
R2
D1
D2
T1
B1, B2
C1
C2, C3
C4
C5
C6, C9
C7, C10
C8
Ferrite Bead
3.3 pF, Chip Capacitor, High Q
4.7 pF, Chip Capacitor, High Q
2.2 pF, Chip Capacitor, High Q
82 pF, Chip Capacitor, High Q
330 pF, Chip Capacitor, High Q
0.1
μ
F, Chip Capacitor
22
μ
F, 16 V, Tantalum Capacitor
C11
D1, D2
P1
R1
R2
R3
T1
Board
4.7
μ
F, 50 V, Tantalum Capacitor
Diode BAS16 Type or Equivalent
1.0 k
, Trimmer
3.3
, Chip Resistor
68
, Chip Resistor
2.2 k
, Resistor
NPN Transistor
Glass Teflon
,
ε
r = 2.55, H = 1/50 inch
+
–
5.0 V
B1
C2
C4
+
26 V
–
B2
D.U.T.
C9
C7
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| MRF6414 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6414PHT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon RF Power Transistor |
| MRF644 | 制造商:MOTOROLA 功能描述:5961010973421 |
| MRF646 | 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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