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| 型号： | MRF658 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 93K |
| 代理商： | MRF658 |
1
MRF658
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
Minimum Efficiency = 50%
Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
Built–In Matching Network for Broadband Operation
Triple Ion Implanted for More Consistent Characteristics
Implanted Emitter Ballast Resistors for Improved Ruggedness
Silicon Nitride Passivated
Capable of Surviving Load Mismatch Stress at all Phase Angles with
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VEBO
IC
PD
16.5
Vdc
Collector–Emitter Voltage
38
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
15
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
175
1.0
Watts
W/
°
C
Storage Temperature Range
Tstg
– 65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.0
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
V(BR)CEO
16.5
29
—
Vdc
V(BR)CES
38
45
—
Vdc
V(BR)EBO
4.0
4.6
—
Vdc
ICES
—
0.1
10
mAdc
(continued)
Order this document
by MRF658/D
SEMICONDUCTOR TECHNICAL DATA
65 W, 512 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
REV 7
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相关代理商/技术参数 |
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| MRF6P18190HR5 | 功能描述:射频MOSFET电源晶体管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P18190HR6 | 功能描述:射频MOSFET电源晶体管 HV6 1.8GHZ 44W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR5 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6 | 功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6P21190HR6_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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