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参数资料
| 型号： | MRF6P9220HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 2/12页 |
| 文件大小： | 458K |
| 代理商： | MRF6P9220HR3 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
10
RF Device Data
Freescale Semiconductor
MRF6P9220HR3
PACKAGE DIMENSIONS
CASE 375G-04
ISSUE G
NI-860C3
1
2
34
5
D
Q
G
L
K
2X
H
E
F
C
SEATING
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
4X
B
A
T
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
1.335
1.345
33.91
34.16
INCHES
B
0.380
0.390
9.65
9.91
C
0.180
0.224
4.57
5.69
D
0.325
0.335
8.26
8.51
E
0.060
0.070
1.52
1.78
F
0.004
0.006
0.10
0.15
G
H
0.097
0.107
2.46
2.72
K
0.135
0.165
3.43
4.19
L
N
0.851
0.869
21.62
22.07
Q
0.118
0.138
3.00
3.30
R
0.395
0.405
10.03
10.29
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
1.100 BSC
0.425 BSC
27.94 BSC
10.8 BSC
J
0.2125 BSC
5.397 BSC
M
0.852
0.868
21.64
22.05
S
0.394
0.406
10.01
10.31
bbb
0.010 REF
0.25 REF
ccc
0.015 REF
0.38 REF
M
A
M
bbb
B M
T
M
A
M
bbb
B M
T
B (FLANGE)
4X
M
A
M
bbb
B M
T
M
A
M
ccc
B M
T
R (LID)
S (INSULATOR)
J
M
A
M
bbb
B M
T
M
A
M
ccc
B M
T
N
(LID)
M
(INSULATOR)
A
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR5 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S18060MBR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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