- 您现在的位置：买卖IC网 > PDF目录98038 > MRF6P9220HR3 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF6P9220HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 458K |
| 代理商： | MRF6P9220HR3 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF6P9220HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
17
11
15
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 47 Watts Avg.
900
890
880
870
860
21
20.4
70
31
28
55
60
65
η
D
,DRAIN
EFFICIENCY
(%)
ηD
19.2
18.9
18.3
18
20.7
20.1
19.8
29
27
45
9
13
18.6
19.5
30
50
7
ALT1
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
17
11
15
910
850
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 94 Watts Avg.
900
890
880
870
860
20
19.6
60
42
39
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
18.8
18.6
18.2
18
19.8
19.4
19.2
40
38
35
9
13
18.4
19
41
40
7
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
17
20.5
3
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20
19
100
500
G
ps
,POWER
GAIN
(dB)
17.5
1600 mA
19.5
18.5
18
10
1200 mA
800 mA
VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
TwoTone Measurements, 100 kHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
20
30
40
50
60
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
IDQ = 800 mA
2000 mA
1200 mA
1600 mA
VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz
TwoTone Measurements, 100 kHz Tone Spacing
500
5
2400 mA
VDD = 28 Vdc, Pout = 47 W (Avg.)
IDQ = 1600 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
VDD = 28 Vdc, Pout = 94 W (Avg.)
IDQ = 1600 mA, NCDMA IS95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6S18060MR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18060MBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6S18060NR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6S18100NBR1 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6P9220HR3_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6P9220HR5 | 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S18060MBR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S18060NBR1 | 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。