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参数资料
| 型号： | MRF6S18140HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 435K |
| 描述： | MOSFET RF N-CH 28V ESD NI880S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.88GHz |
| 增益： | 16dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 1.2A |
| 功率 - 输出： | 29W |
| 电压 - 额定： | 68V |
| 封装/外壳： | NI-880S |
| 供应商设备封装： | NI-880S |
| 包装： | 带卷 (TR) |
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ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2006
?
Initial Release of Data Sheet
1
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 6
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
1.1
Dec. 2009
?
Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change
Notification number, PCN13232, p. 1, 2
?
Data sheet archived. Part no longer manufactured.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S18140HSR5 | 功能描述:射频MOSFET电源晶体管 1.8GHZ 28V 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S1900HSR3 | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19060GN | 制造商:Freescale Semiconductor 功能描述:MRF6S19060GN - Bulk |
| MRF6S19060GNR1 | 功能描述:射频MOSFET电源晶体管 1990MHZ 12W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19060MBR1 | 功能描述:MOSFET RF N-CH 28V 12W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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