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参数资料
| 型号： | MRF6S19120HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 456K |
| 代理商： | MRF6S19120HSR3 |
MRF6S19120HR3 MRF6S19120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
26
18
20
22
24
2040
1940
IRL
Gps
ACPR
2010
2000
1990
1980
1970
1960
1950
14
15.6
15.4
55
32
30
28
26
40
45
50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
15.2
15
14.8
14.6
14.4
14.2
35
2020 2030
ALT1
16
14
12
10
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA
SingleCarrier NCDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
26
18
20
22
24
2040
1940
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 19 Watts Avg.
2010
2000
1990
1980
1970
1960
1950
14
15.6
15.4
65
26
24
22
20
50
55
60
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 32 Watts Avg.
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
12
17
0.6
IDQ = 1500 mA
1250 mA
Pout, OUTPUT POWER (WATTS) PEP
15
13
10
40
20
1
Pout, OUTPUT POWER (WATTS) PEP
10
25
30
100
55
45
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
15.2
15
14.8
14.6
14.4
14.2
45
16
14
750 mA
500 mA
IDQ = 500 mA
750 mA
1500 mA
VDD = 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
2020 2030
ALT1
16
14
12
10
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA
SingleCarrier NCDMA, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB @ 0.01%
Probability (CCDF)
1
300
1000 mA
35
50
0.6
300
1250 mA
1000 mA
VDD = 28 Vdc
f1 = 1988.75 MHz, f2 = 1991.25 MHz
TwoTone Measurements, 2.5 MHz Tone Spacing
LIFETIME
BUY
LAST
ORDER
4
APR
09
LAST
SHIP
3
OCT
09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19120HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
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