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| 型号： | MRF6S19140HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 405K |
| 代理商： | MRF6S19140HR3 |
MRF6S19140HR3 MRF6S19140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA,
Pout = 29 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
RθJC
0.33
0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S19140H
Rev. 5, 5/2007
Freescale Semiconductor
Technical Data
MRF6S19140HR3
MRF6S19140HSR3
1930 -1990 MHz, 29 W AVG., 28 V
2 x N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465C-02, STYLE 1
NI-880S
MRF6S19140HSR3
CASE 465B-03, STYLE 1
NI-880
MRF6S19140HR3
Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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