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| 型号： | MRF6S19140HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 405K |
| 代理商： | MRF6S19140HR3 |
MRF6S19140HR3 MRF6S19140HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Z7
0.115″ x 0.569″ Microstrip
Z8
0.191″ x 0.289″ Microstrip
Z9
0.681″ x 0.081″ Microstrip
Z10
1.140″ x 0.081″ Microstrip
PCB
Arlon GX0300-55-22, 0.030″, εr = 2.5
Z1
0.864″ x 0.082″ Microstrip
Z2
1.373″ x 0.082″ Microstrip
Z3
0.282″ x 0.900″ Microstrip
Z4
0.103″ x 0.900″ Microstrip
Z5
0.094″ x 1.055″ Microstrip
Z6
0.399″ x 1.055″ Microstrip
RF
INPUT
RF
OUTPUT
C7
DUT
Z1
C1
R3
R1
VBIAS
R5
B1
C13
+
C3
Z2
Z3
VBIAS
C8
R4
R2
R6
B2
C14
+
C4
Z4
Z5
Z6
Z7
C5
C9
C11
C15
+
VSUPPLY
Z8
Z9
C2
Z10
VSUPPLY
C6
C10
C12
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair-Rite
C1, C2
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C7, C8, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C13, C14
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C15
470 μF, 63 V Electrolytic Capacitor
ESMG630ELL471MK205
United Chemi-Con
R1, R2
560 kΩ, 1/4 W Chip Resistors
CRCW12065600FKTA
Vishay
R3, R4
1.0 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R5, R6
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKTA
Vishay
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S19140HSR3 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6S19140HSR5 | 功能描述:射频MOSFET电源晶体管 HV6 28V29W LDMOS NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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