参数资料
型号: MRF6S21050LSR3
厂商: Freescale Semiconductor
文件页数: 11/11页
文件大小: 392K
描述: MOSFET RF N-CH 28V 11.5W NI-400S
标准包装: 250
晶体管类型: LDMOS
频率: 2.16GHz
增益: 16dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 450mA
功率 - 输出: 11.5W
电压 - 额定: 68V
封装/外壳: NI-400S
供应商设备封装: NI-400S
包装: 带卷 (TR)
MRF6S21050LR3 MRF6S21050LSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E-04
ISSUE F
NI-400
MRF6S21050LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45°
CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
T
SEATINGPLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
C
bbb AT
B
M
M
M
H
B
B
G
A
ccc BT
A
M
M
M
bbb BT
A
M
M
M
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
ccc BT
A
M
M
M
aaa BT
A
M
M
M
aaa BT
A
M
M
M
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.44
INCHES
B
.380 .390 9.65 9.9
C
.125 .163 3.17 4.14
D
.275 .285 6.98 7.24
E
.035 .045 0.89 1.14
F
.004 .006 0.10 0.15
G
H
.057 .067 1.45 1.7
K
.092 .122 2.33 3.1
M
.395 .405 10 10.3
N
.395 .405 10 10.3
Q
.120 .130 3.05 3.3
R
.395 .405 10 10.3
S
.395 .405 10 10.3
aaa
bbb
ccc
.600 BSC 15.24 BSC
.005 BSC 0.127 BSC
.010 BSC 0.254 BSC
.015 BSC 0.381 BSC
SEE NOTE 4
CASE 465F-04
ISSUE E
NI-400S
MRF6S21050LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M?1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
T
SEATINGPLANE
2
E
F
2X K
bbb BT
A
M
M
M
A
C
H
B
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.395 .405 10.03 10.29
INCHES
B
.395 .405 10.03 10.29
C
.125 .163 3.18 4.14
D
.275 .285 6.98 7.24
E
.035 .045 0.89 1.14
F
.004 .006 0.10 0.15
H
.057 .067 1.45 1.70
K
.092 .122 2.34 3.10
M
.395 .405 10.03 10.29
S
.395 .405 10.03 10.29
aaa
.005 REF 0.127 REF
2X D
ccc BT
A
M
M
M
bbb
.010 REF 0.254 REF
ccc
.015 REF 0.38 REF
N
.395 .405 10.03 10.29
R
.395 .405 10.03 10.29
ccc BT
A
M
M
M
aaa BT
A
M
M
M
N
(LID)
M
(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R
(LID)
S
(INSULATOR)
aaa BT
A
M
M
M
相关PDF资料
PDF描述
MIN02-002DC320J-F CAP MICA 32PF 300V 5% SMD
MRF7S19080HSR3 MOSFET RF N-CH NI-780S
ST5ETW501 TRIMMER 500 OHM 0.25W SMD
WMF1D68K CAP FILM 6800PF 100VDC AXIAL
MRF7S19080HR3 MOSFET RF N-CH NI-780
相关代理商/技术参数
参数描述
MRF6S21050LSR5 功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21060BR1 制造商:Freescale Semiconductor 功能描述:
MRF6S21060MBR1 功能描述:MOSFET RF N-CH 28V 14W TO272-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S21060MR1 功能描述:MOSFET RF N-CH 28V 14W TO270-4 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S21060N 制造商:FREESCALE-SEMI 功能描述: