参数资料
型号: MRF6S21050LSR3
厂商: Freescale Semiconductor
文件页数: 4/11页
文件大小: 392K
描述: MOSFET RF N-CH 28V 11.5W NI-400S
标准包装: 250
晶体管类型: LDMOS
频率: 2.16GHz
增益: 16dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 450mA
功率 - 输出: 11.5W
电压 - 额定: 68V
封装/外壳: NI-400S
供应商设备封装: NI-400S
包装: 带卷 (TR)
2
RF Device Data
Freescale Semiconductor
MRF6S21050LR3 MRF6S21050LSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 200
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 450 mAdc, Measured in Functional Test)
VGS(Q)
2
2.9
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1.1 Adc)
VDS(on)
?
0.21
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.75
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 450 mA, P
out
= 11.5 W Avg., f = 2157 MHz, 2-carrier
W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
26
27.7
?
%
Intermodulation Distortion
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
?
-40
-38
dBc
Input Return Loss
IRL
?
-15
-9
dB
1. Part is internally matched both on input and output.
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