参数资料
型号: MRF6S23140HSR5
厂商: Freescale Semiconductor
文件页数: 8/12页
文件大小: 432K
描述: MOSFET RF N-CHAN 28W 28W NI-880S
产品变化通告: RF Devices Discontinuation 28/Jun/2011
标准包装: 50
晶体管类型: LDMOS
频率: 2.39GHz
增益: 15.2dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.3A
功率 - 输出: 28W
电压 - 额定: 68V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
MRF6S23140HR3 MRF6S23140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?18
?9
?12
?15
2430
2270
IRL
Gps
ACPR
?40
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout
= 28 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.6
15.5
?42
28
27
26
?36
η
D
, DRAIN
EFFICIENCY (%)
ηD
15.4
15.3
15.2
15
14.8
14.9
15.1
?38
?34
25
?6
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?18
?9
?12
?15
2430
2270
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout
= 56 Watts Avg.
2410
2390
2370
2350
2330
2310
2290
15.1
15
?33
38
37
36
?27
?31
η
D
, DRAIN
EFFICIENCY (%)
ηD
14.9
14.8
14.7
14.5
14.3
14.4
14.6
?29
?25
35
?6
Figure 5. Two-Tone Power Gain versus
Output Power
10 300100
11
18
1
IDQ
= 1950 mA
1625 mA
Pout, OUTPUT POWER (WATTS) PEP
16
15
14
G
ps
, POWER GAIN (dB)
13
1300 mA
975 mA
650 mA
VDD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?50
1
IDQ
= 650 mA
Pout, OUTPUT POWER (WATTS) PEP
100
?20
?30
?40
?60
VDD
= 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
?10
1625 mA
975 mA
1300 mA
17
12
300
VDD= 28 Vdc
Pout
= 28 W (Avg.)
IDQ
= 1300 mA, 2?Carrier W?CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
VDD= 28 Vdc
Pout
= 56 W (Avg.)
IDQ
= 1300 mA, 2?Carrier W?CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
1950 mA
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