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| 型号： | MRF6S9130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 486K |
| 代理商： | MRF6S9130HSR3 |
MRF6S9130HR3 MRF6S9130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — -48.1 dBc in 30 kHz Bandwidth
GSM Application
Typical GSM Performance: VDD = 28 Volts, IDQ = 950 mA, Pout =
130 Watts, Full Frequency Band (921-960 MHz)
Power Gain — 18 dB
Drain Efficiency — 63%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 56 Watts Avg., Full Frequency Band (921-960 MHz)
Power Gain — 18.5 dB
Drain Efficiency — 44%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM — 1.5% rms
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 130 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
389
2.2
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Document Number: MRF6S9130H
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF6S9130HR3
MRF6S9130HSR3
880 MHz, 27 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465A-06, STYLE 1
NI-780S
MRF6S9130HSR3
CASE 465-06, STYLE 1
NI-780
MRF6S9130HR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
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| MRF6S9130HSR5 | 功能描述:MOSFET RF N-CHAN 28V 27W NI-780S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9160H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9160HR3 | 功能描述:MOSFET RF N-CHAN 28V 35W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF6S9160HR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S9160HR5 | 功能描述:MOSFET RF N-CHAN 28V 35W NI-780 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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