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参数资料
| 型号： | MRF6V12250HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465A-06, NI-780S, 2 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 1274K |
| 代理商： | MRF6V12250HSR3 |
MRF6V12250HR3 MRF6V12250HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 960 and 1215 MHz. These devices are suitable for use in pulsed
applications.
Typical Pulsed Performance: VDD =50 Volts,IDQ = 100 mA, Pout =
275 Watts Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 μsec,
Duty Cycle = 10%
Power Gain — 20.3 dB
Drain Efficiency — 65.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak
Power
Typical Broadband Performance: VDD =50 Volts,IDQ = 100 mA, Pout =
250 Watts Peak (25 Watts Avg.), f = 960--1215 MHz, Pulse Width =
128 μsec, Duty Cycle = 10%
Power Gain — 19.8 dB
Drain Efficiency — 58%
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 275 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
ZθJC
0.08
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
960--1215 MHz, 275 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF6V12250HR3
MRF6V12250HSR3
CASE 465--06, STYLE 1
NI--780
MRF6V12250HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V12250HSR3
Document Number: MRF6V12250H
Rev. 2, 4/2010
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V12250HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 250W 50V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6V12500HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V12500HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V12500HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 500W 50V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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