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参数资料
| 型号： | MRF6V2010NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1337-04, 2 PIN |
| 文件页数： | 1/21页 |
| 文件大小： | 1668K |
| 代理商： | MRF6V2010NBR1 |
MRF6V2010NR1 MRF6V2010NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance at 220 MHz: VDD =50 Volts,IDQ =30 mA,
Pout = 10 Watts
Power Gain — 23.9 dB
Drain Efficiency — 62%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
TO--270--2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
TO--272--2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
RθJC
3.0
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V2010N
Rev. 5, 4/2010
Freescale Semiconductor
Technical Data
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6V2010NR1
MRF6V2010NBR1
CASE 1265--09, STYLE 1
TO--270--2
PLASTIC
MRF6V2010NR1
CASE 1337--04, STYLE 1
TO--272--2
PLASTIC
MRF6V2010NBR1
Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2010NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
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