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| 型号： | MRF7S18125AHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125AHR3 |
MRF7S18125AHR3 MRF7S18125AHSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout =
125 Watts CW, f = 1880 MHz.
Power Gain — 17 dB
Drain Efficiency — 55%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA,
Pout = 57 Watts Avg., Full Frequency Band (1805-1880 MHz).
Power Gain — 17 dB
Drain Efficiency — 38%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -75 dBc
EVM — 1.75% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW
Output Power
Typical Pout @ 1 dB Compression Point ] 140 Watts CW
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 71 W CW
RθJC
0.31
0.34
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S18125AH
Rev. 0, 11/2008
Freescale Semiconductor
Technical Data
MRF7S18125AHR3
MRF7S18125AHSR3
1805-1880 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S18125AHR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S18125AHSR3
Freescale Semiconductor, Inc., 2008. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125BHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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