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参数资料
| 型号： | MRF7S18125AHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 13/14页 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125AHR3 |
8
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
500
12
24
20
16
0
10
1
820
60
40
30
0
10
30
_C
85
_C
Figure 13. EVM and Drain Efficiency versus
Output Power
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 25_C
EVM
VDD = 28 Vdc, IDQ = 1100 mA
f = 1840 MHz, EDGE Modulation
14
19
TC = 30_C
25
_C
85
_C
18
17
16
15
f, FREQUENCY (MHz)
Figure 14. Power Gain versus Frequency
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc
Pout = 125 W CW
IDQ = 1100 mA
4
100
50
30
_C
25
_C
85
_C
1880
1810
1850
1840
1830
1820
1860
1870
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 125 W CW, and ηD = 55%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
108
ηD
η
D,
DRAIN
EFFICIENCY
(%)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125BHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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