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参数资料
| 型号： | MRF7S18125AHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125AHR3 |
MRF7S18125AHR3 MRF7S18125AHSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1805-1880 MHz Bandwidth
Pout @ 1 dB Compression Point
P1dB
—
140
—
W
IMD Symmetry @ 125 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
8
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 125 W CW
GF
—
0.8
—
dB
Average Deviation from Linear Phase in 75 MHz Bandwidth
@ Pout = 125 W CW
Φ
—
0.49
—
°
Average Group Delay @ Pout = 125 W CW, f = 1840 MHz
Delay
—
1.21
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 125 W CW,
f = 1840 MHz, Six Sigma Window
ΔΦ
—
8.66
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.016
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.01
—
dBm/°C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W
Avg., 1805-1880 MHz EDGE Modulation
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
38
—
%
Error Vector Magnitude
EVM
—
1.75
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
-63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
-75
—
dBc
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125BHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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