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参数资料
| 型号： | MRF7S18125AHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 11/14页 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125AHR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
TYPICAL CHARACTERISTICS
η
D,
DRAIN
EFFICIENCY
(%)
η
D,
DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
f, FREQUENCY (MHz)
15
53
Gps
18
59
17.5
58
17
57
56
54
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 125 Watts CW
13
7
9
11
19
16
55
15
17
ηD
1810
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 57 Watts Avg.
Gps
17.5
0
60
IRL
17
50
40
16
30
20
15
10
G
ps
,POWER
GAIN
(dB)
EVM
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
VDD = 28 Vdc, Pout = 57 W Avg.
IDQ = 1100 mA, EDGE Modulation
Pout, OUTPUT POWER (WATTS) CW
100
13
18
IDQ = 1650 mA
VDD = 28 Vdc
f = 1840 MHz
17
15
14
10
300
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
16
825 mA
1375 mA
550 mA
VDD = 28 Vdc
Pout = 125 W CW, IDQ = 1100 mA
100
60
0
0.1
10
20
30
40
50
TWOTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
1
IM7U
IM5U
IM5L
IM3L
IM7L
IM3U
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 1100 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
16.5
15.5
1820
1830
1840
1850
1860
1870
1880
16.5
15.5
14.5
1810
1820
1830
1840
1850
1860
1870
1880
IRL,
INPUT
RETURN
LOSS
(dB)
13
7
9
11
19
15
17
1100 mA
10
ηD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125BHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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