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参数资料
| 型号： | MRF7S18125AHR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件页数： | 12/14页 |
| 文件大小： | 471K |
| 代理商： | MRF7S18125AHR3 |
MRF7S18125AHR3 MRF7S18125AHSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
44
60
Pin, INPUT POWER (dBm)
53
51
50
34
37
35
Actual
Ideal
52
36
38
39
Figure 7. Pulsed CW Output Power versus
Input Power
P
out
,OUTPUT
POWER
(dBc)
P6dB = 52.74 dBm (187.8 W)
54
55
56
57
40
41
42
43
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
12
μsec(on), 1% Duty Cycle, f = 1840 MHz
300
18
15
70
VDD = 28 Vdc
IDQ = 1100 mA
f = 1840 MHz
TC = 30_C
25
_C
30
_C
10
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 8. Power Gain and Drain Efficiency
versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
17.5
17
100
40
25
_C
85
_C
58
59
P3dB = 52.25 dBm (167.9 W)
P1dB = 51.60 dBm
(144.6 W)
16.5
16
15.5
15
14.5
14
13.5
13
12.5
25
35
45
50
55
60
65
85
_C
Figure 9. EVM versus Frequency
f, FREQUENCY (MHz)
Pout = 78 W Avg.
15 W Avg.
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
1880
0
5
1810
3
1
1850
1840
1830
1820
4
2
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
1860
1870
43 W Avg.
50
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
55
60
65
Pout = 78 W Avg.
SR @ 600 kHz
43 W Avg.
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
70
75
80
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
1880
1810
1850
1840
1830
1820
1860
1870
15 W Avg.
78 W Avg.
15 W Avg.
43 W Avg.
TC = 30_C
25
_C
85
_C
75
35
0
Pout, OUTPUT POWER (WATTS)
50
55
60
70
20
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
40
200
65
60
80
100
VDD = 28 Vdc
IDQ = 1100 mA
f = 1840 MHz
EDGE Modulation
45
40
120
140
160
180
TC = 30_C
25
_C
85
_C
85
45
0
Pout, OUTPUT POWER (WATTS)
65
70
75
80
20
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
40
200
60
80
100
VDD = 28 Vdc, IDQ = 1100 mA
f = 1840 MHz, EDGE Modulation
60
55
50
120
140
160
180
ηD
η
D
,DRAIN
EFFICIENCY
(%)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S18125AHR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF7S18125AHSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125AHSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ CW125W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S18125BHR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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