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参数资料
| 型号： | MRF6V4300NBR1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB, 4 PIN |
| 文件页数： | 1/15页 |
| 文件大小： | 816K |
| 代理商： | MRF6V4300NBR1 |
MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW Performance: VDD =50 Volts,IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6V4300N
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
MRF6V4300NR1
MRF6V4300NBR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V4300NBR1
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V4300NR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V4300NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4 |
| MRF6V4300NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NR1_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF6V4300NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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