- 您现在的位置：买卖IC网 > PDF目录98040 > MRF6VP21KHR6 (FREESCALE SEMICONDUCTOR INC) VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF6VP21KHR6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 702K |
| 代理商： | MRF6VP21KHR6 |
MRF6VP21KHR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
235 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
Typical Pulsed Performance at 225 MHz: VDD =50 Volts,IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 24 dB
Drain Efficiency — 67.5%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
ZθJC
0.03
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6VP21KH
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
MRF6VP21KHR6
10--235 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
PART IS PUSH--PULL
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6VP2600HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3091NR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3091NBR1 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6VP3091NR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6VP3450HR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP21KHR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP2600HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP2600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。