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| 型号： | MRF6VP3450HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN |
| 文件页数： | 1/18页 |
| 文件大小： | 1077K |
| 代理商： | MRF6VP3450HR5 |
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
Typical DVB--T OFDM Performance: VDD =50 Volts,IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
Typical Broadband Two--Tone Performance: VDD =50 Volts,IDQ = 1400 mA,
Pout = 450 Watts PEP, f = 470--860 MHz
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — --29 dBc
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP3450H
Rev. 4, 4/2010
Freescale Semiconductor
Technical Data
860 MHz, 450 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
CASE 375D--05, STYLE 1
NI--1230
MRF6VP3450HR6(HR5)
PARTS ARE PUSH--PULL
(Top View)
RFoutA/VDSA
31
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Figure 1. Pin Connections
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP3450HSR6(HSR5)
Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP3450HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP3450HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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