- 您现在的位置：买卖IC网 > PDF目录98040 > MRF6VP3091NR5 (FREESCALE SEMICONDUCTOR INC) 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 PDF资料下载
参数资料
| 型号： | MRF6VP3091NR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN |
| 文件页数： | 1/18页 |
| 文件大小： | 749K |
| 代理商： | MRF6VP3091NR5 |
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
1
RF Device Data
Freescale Semiconductor
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
Typical Broadband Performance: VDD =50 Volts,IDQ = 450 mA, 64 QAM,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
18 Avg.
470
21.8
31.0
7.9
--27.8
650
21.6
26.4
8.4
--37.6
860
21.7
27.6
7.1
--30.4
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Excellent Thermal Stability
Device can be used Single--Ended or in a Push--Pull Configuration
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +115
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76
°C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
Case Temperature 80
°C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
RθJC
0.79
0.82
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6VP3091N
Rev. 0, 9/2011
Freescale Semiconductor
Technical Data
(Top View)
470--860 MHz, 90 W, 50 V
LDMOS BROADBAND
RF POWER TRANSISTORS
PARTS ARE PUSH--PULL
RFoutA/VDSA
Figure 1. Pin Connections
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6VP3091NBR1(NBR5)
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6VP3091NR1(NR5)
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
Freescale Semiconductor, Inc., 2011. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6VP3450HR5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3450HR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP3450HSR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP41KHSR6 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF7P20040HR3 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP3450HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP3450H Series 470 - 860 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP3450HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3450HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6VP3450HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。