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| 型号： | MRF6VP2600HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/19页 |
| 文件大小： | 1438K |
| 描述： | MOSFET RF N-CH 50V NI-1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 225MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 2.6A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF6VP2600HR5DKR |
MRF6VP2600HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
?
Typical DVB--T OFDM Performance: VDD
=50Volts,IDQ
= 2600 mA,
Pout
= 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @
0.01% Probability on CCDF.
Power Gain ? 25 dB
Drain Efficiency ? 28.5%
ACPR @ 4 MHz Offset ? --61 dBc @ 4 kHz Bandwidth
?
Typical Pulsed Performance: VDD
=50Volts,IDQ
= 2600 mA,
Pout
= 600 Watts Peak, f = 225 MHz, Pulse Width = 100
μsec, Duty
Cycle = 20%
Power Gain ? 25.3 dB
Drain Efficiency ? 59%
?
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100
μsec, Duty Cycle = 20%
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
CW Operation Capability with Adequate Cooling
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Integrated ESD Protection
?
Designed for Push--Pull Operation
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, IDQ
= 2600 mA
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, IDQ
= 150 mA
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, IDQ
= 150 mA
RθJC
0.20
0.14
0.16
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
Freescale Semiconductor
Technical Data
MRF6VP2600HR6
2--500 MHz, 600 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
PART IS PUSH--PULL
Figure 1. Pin Connections
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
?
Freescale Semiconductor, Inc., 2008--2010.
All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MRF6VP2600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6VP2600HR6 Series 10 - 250 MHz 110 V N-Channel RF Power Mosfet |
| MRF6VP2600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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