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| 型号： | MRF7S35015HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 819K |
| 描述： | MOSFET RF N-CH 15W NI-400S-240 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 3.1GHz |
| 增益： | 16dB |
| 电压 - 测试： | 32V |
| 额定电流： | 10µA |
| 电流 - 测试： | 50mA |
| 功率 - 输出： | 15W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400S-240 |
| 供应商设备封装： | NI-400S-240 |
| 包装： | 带卷 (TR) |
MRF7S35015HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
?
Typical Pulsed Performance: VDD
=32Volts,IDQ
=50mA,
Pout
= 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100
μsec, Duty Cycle = 20%
Power Gain ? 16 dB
Drain Efficiency ? 41%
?
Typical WiMAX Performance: VDD
=32Volts,IDQ
= 150 mA,
Pout
= 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM
3/4,4Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain ? 18 dB
Drain Efficiency ? 16%
RCE ? --33 dB (EVM ? 2.2% rms)
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak
Power
?
Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 15 W Pulsed, 100
μsec Pulse Width, 20% Duty Cycle
Case Temperature 81°C, 15 W Pulsed, 500
μsec Pulse Width, 10% Duty Cycle
RθJC
0.60
0.73
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MRF7S35015HSR3
3100--3500 MHz, 15 W PEAK, 32 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465J--02, STYLE 1
NI--400S--240
Document Number: MRF7S35015HS
Rev. 2, 4/2011
Freescale Semiconductor
Technical Data
?
Freescale Semiconductor, Inc., 2008, 2011.
All rights reserved.
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相关代理商/技术参数 |
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| MRF7S35120HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S35120HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF7S38010HR3 | 功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38010HR5 | 功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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