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| 型号： | MRF7S38010HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 520K |
| 描述： | MOSFET RF N-CH 2W 30V NI-400S |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 3.4GHz |
| 增益： | 15dB |
| 电压 - 测试： | 30V |
| 额定电流： | 10µA |
| 电流 - 测试： | 160mA |
| 功率 - 输出： | 2W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-400S-240 |
| 供应商设备封装： | NI-400S-240 |
| 包装： | 带卷 (TR) |
MRF7S38010HR3 MRF7S38010HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
?
Typical WiMAX Performance: VDD
= 30 Volts, I
DQ
= 160 mA, P
out
=
2 Watts Avg., f = 3400-3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5
dB @ 0.01% Probability on
CCDF.
Power Gain ? 15 dB
Drain Efficiency ? 17%
Device Output Signal PAR ? 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset ? -49
dBc in 0.5
MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW
Peak Tuned Output Power
?
Pout
@ 1 dB Compression Point
10 Watts CW
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W CW
Case Temperature 77°C, 2 W CW
RθJC
2.05
2.24
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S38010H
Rev. 0, 8/2007
Freescale Semiconductor
Technical Data
MRF7S38010HR3
MRF7S38010HSR3
3400-3600 MHz, 2 W AVG., 30 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465I-02, STYLE 1
NI-400-240
MRF7S38010HR3
CASE 465J-02, STYLE 1
NI-400S-240
MRF7S38010HSR3
?
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S38040HR3 | 功能描述:射频MOSFET电源晶体管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38040HR5 | 功能描述:射频MOSFET电源晶体管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38040HSR3 | 功能描述:射频MOSFET电源晶体管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38040HSR5 | 功能描述:射频MOSFET电源晶体管 3600MHZ 8W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38075HR3 | 功能描述:射频MOSFET电源晶体管 3600MHZ 12W 30V NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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