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参数资料
| 型号： | MRF7S38075HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 435K |
| 描述： | MOSFET RF N-CH 12W 30V NI-780 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 3.4GHz |
| 增益： | 14dB |
| 电压 - 测试： | 30V |
| 额定电流： | 10µA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 12W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 248
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
= 30 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.77
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
464
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
214
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, P
out
= 12 W Avg., f = 3400 MHz and f =
3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
Gps
12
14
17
dB
Drain Efficiency
ηD
12
14
24
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
7.5
8.7
?
dB
Adjacent Channel Power Ratio
ACPR
?
-49
-46
dBc
Input Return Loss
IRL
?
-12
-5
dB
1. Part internally matched both on input and output.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S38075HSR3 | 功能描述:射频MOSFET电源晶体管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S38075HSR5 | 功能描述:射频MOSFET电源晶体管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF80 | 制造商:Ferraz Shawmut 功能描述: |
| MRF800 | 制造商:Ferraz Shawmut 功能描述: |
| MRF837 | 制造商:Motorola Inc 功能描述: 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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