参数资料
型号: MRF7S38075HR5
厂商: Freescale Semiconductor
文件页数: 9/12页
文件大小: 435K
描述: MOSFET RF N-CH 12W 30V NI-780
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 50
晶体管类型: LDMOS
频率: 3.4GHz
增益: 14dB
电压 - 测试: 30V
额定电流: 10µA
电流 - 测试: 900mA
功率 - 输出: 12W
电压 - 额定: 65V
封装/外壳: NI-780
供应商设备封装: NI-780
包装: 带卷 (TR)
6
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout
= 12 Watts Avg.
?20
?8
?12
?16
11.5
15.5
?55
16
14
12
?49
?51
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
14.5
14
13.5
13
12.5
3450 3500 36003475
3525 35753550
10
?53
?24
IRL
Gps
ηD
VDD= 30 Vdc, Pout
= 12 W (Avg.), I
DQ
= 900 mA, 802.16d
64 QAM 3/4,
4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
ACPR?L
ACPR?U
12
?47
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout
= 23 Watts Avg.
?20
?8
?12
?16
11
15
?46
24
22
20
?40
?42
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
14.5
14
13.5
13
12.5
18
?44
?24
IRL
Gps
VDD= 30 Vdc, Pout
= 23 W (Avg.), I
DQ
= 900 mA, 802.16d
64 QAM 3/4,
4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
ACPR?L
ACPR?U
12
?38
Figure 5. Two-Tone Power Gain versus
Output Power
9
16
1
IDQ
= 1350 mA
Pout, OUTPUT POWER (WATTS) PEP
14
13
11
10 100
G
ps
, POWER GAIN (dB)
VDD
= 30 Vdc, I
DQ
= 900 mA
f1 = 3495
MHz, f2 = 3505 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
12
15
1125 mA
900 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
IDQ
= 450 mA
Pout, OUTPUT POWER (WATTS) PEP
10
?20
?30
?40
?50
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
100
?10
VDD
= 30 Vdc, I
DQ
= 900 mA
f1 = 3495
MHz, f2 = 3505 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
1350 mA
675 mA
900 mA
3425
3400
3450 3500 36003475
3525 35753550
3425
3400
11.5
ηD
10
200
675 mA
450 mA
200
1125 mA
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