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| 型号： | MRF7S38075HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 435K |
| 描述： | MOSFET RF N-CH 12W 30V NI-780S |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 3.4GHz |
| 增益： | 14dB |
| 电压 - 测试： | 30V |
| 额定电流： | 10µA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 12W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780S |
| 供应商设备封装： | NI-780S |
| 包装： | 带卷 (TR) |
MRF7S38075HR3 MRF7S38075HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
?
Typical WiMAX Performance: VDD
= 30 Volts, I
DQ
= 900 mA, P
out
=
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7
MHz Channel Bandwidth, Input Signal PAR = 9.5
dB @ 0.01% Probability
on CCDF.
Power Gain ? 14 dB
Drain Efficiency ? 14%
Device Output Signal PAR ? 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset ? -49
dBc in 0.5
MHz Channel Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
?
Pout
@ 1 dB Compression Point
75 Watts CW
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
RθJC
0.46
0.49
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S38075H
Rev. 0, 8/2007
Freescale Semiconductor
Technical Data
MRF7S38075HR3
MRF7S38075HSR3
3400-3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S38075HR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S38075HSR3
?
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S38075HSR5 | 功能描述:射频MOSFET电源晶体管 3600MHZ 12W 30V NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF80 | 制造商:Ferraz Shawmut 功能描述: |
| MRF800 | 制造商:Ferraz Shawmut 功能描述: |
| MRF837 | 制造商:Motorola Inc 功能描述: 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF8372 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF LOW POWER TRANSISTOR NPN SILICON |
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