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参数资料
| 型号： | MRF858 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 164K |
| 代理商： | MRF858 |
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
hFE
30
60
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
Cob
—
6.5
8
pF
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
Pg
11
12
—
dB
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
ψ
No Degradation in
Output Power
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
Pin(over)
—
—
0.85
W
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO
+44.5
+45.5
—
dBm
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
NF
—
6
—
dB
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
IRL
—
–12
–9
dB
Table 1. MRF858 Common Emitter S–Parameters
(V)
(A)
f
(MHz)
S11
S21
S12
S22
VCE
IC
|S11|
0.942
0.942
0.941
0.940
0.941
0.940
0.940
0.940
0.940
∠
φ
|S21|
1.493
1.453
1.415
1.379
1.351
1.320
1.289
1.252
1.222
∠
φ
|S12|
0.027
0.027
0.028
0.028
0.029
0.030
0.030
0.031
0.031
∠
φ
|S22|
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
∠
φ
24
0.5
800
820
840
860
880
900
920
940
960
167
166
166
166
165
165
165
164
164
50
50
49
48
47
46
45
44
43
58
58
59
59
59
59
59
59
59
–165
–164
–165
–165
–165
–165
–165
–165
–165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
840
870
900
1.1
1.1
1.2
2.9
3.5
3.5
9.9
9.5
9
–14.4
–14.6
–14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
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