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参数资料
| 型号： | MRF894 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | CAP 680PF 250VAC B X1Y2 RAD |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 104K |
| 代理商： | MRF894 |
21
MRF894
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for 24 volt UHF large–signal, common–base amplifier applications
in industrial and commercial FM equipment operating in the range of
804–960 MHz.
Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
Series Equivalent Large–Signal Characterization
Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply
Voltage
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
Vdc
Collector–Base Voltage
50
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
7.0
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
115
0.66
Watts
W/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
1.5
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
NOTES:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
30
—
—
Vdc
50
—
—
Vdc
4.0
—
—
Vdc
—
—
10
mAdc
(continued)
Order this document
by MRF894/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
REV 6
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