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参数资料
| 型号： | MRF8P23080HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 14/15页 |
| 文件大小： | 645K |
| 代理商： | MRF8P23080HSR3 |
8
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
VDD =28 Vdc,IDQA = 280 mA
f
MHz
Max Pout (1)
Zsource
Zload
Watts
dBm
2300
58
47.6
8.42 -- j14.3
3.51 -- j5.02
2350
55
47.4
11.4 -- j13.4
3.75 -- j5.03
2400
55
47.4
17.7 -- j9.34
3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQA = 280 mA
f
MHz
Max Eff. (1)
%
Zsource
Zload
2300
60.9
8.41 -- j14.3
7.02 -- j3.44
2350
60.1
11.4 -- j13.4
6.84 -- j2.41
2400
60.0
17.7 -- j9.35
6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Z source
Z load
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P23080HSR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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