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参数资料
| 型号： | MRF8P26080HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件页数： | 12/14页 |
| 文件大小： | 563K |
| 代理商： | MRF8P26080HR3 |
MRF8P26080HR3 MRF8P26080HSR3
7
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24
6
8
PR
OBABIL
ITY
(%
)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
--60
--100
10
(dB
)
--20
--30
--40
--50
--70
--80
--90
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
--1.8
--3.6
--5.4
--9
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
--7.2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
--10
0
13
5
7
9
VDD =28 Vdc,IDQA = 300 mA
f
MHz
Max Pout (1)
Zsource
Zload
Watts
dBm
2570
50
47.0
15.3 -- j13.5
3.65 -- j6.25
2595
51
47.1
17.4 -- j12.6
4.26 -- j5.53
2620
49
46.9
18.0 -- j10.3
4.09 -- j5.62
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 11. Carrier Side Load Pull Performance —
Maximum P1dB Tuning
Z source
Z load
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28 Vdc,IDQA = 300 mA
f
MHz
Max Eff. (1)
%
Zsource
Zload
2570
46.2
15.3 -- j13.5
6.67 -- j2.44
2595
45.8
17.4 -- j12.6
6.34 -- j2.10
2620
46.4
18.0 -- j10.3
6.16 -- j2.49
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 12. Carrier Side Load Pull Performance —
Maximum Efficiency Tuning
Z source
Z load
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P26080HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P26080HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P26080HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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