参数资料
型号: MRF8P26080HR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN
文件页数: 13/14页
文件大小: 563K
代理商: MRF8P26080HR3
8
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
32
Pin, INPUT POWER (dBm)
VDD =28 Vdc,IDQA = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
47
45
35
33
Actual
Ideal
48
46
41
P out
,O
UT
PU
T
POWER
(d
Bm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
49
50
51
52
31
30
29
24
28
25
f = 2620 MHz
27
26
44
43
f = 2570 MHz
f = 2595 MHz
34
f = 2570 MHz
42
f = 2595 MHz
f
(MHz)
P1dB
P3dB
Watts
dBm
Watts
dBm
2570
50
47.0
61.7
47.9
2595
51
47.1
60.3
47.8
2620
49
46.9
60.3
47.8
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
2570
P1dB
15.3 -- j13.5
3.65 -- j6.25
2595
P1dB
17.4 -- j12.6
4.26 -- j5.53
2620
P1dB
18.0 -- j10.3
4.09 -- j5.62
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
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