参数资料
型号: MRF8P26080HSR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件页数: 10/14页
文件大小: 563K
代理商: MRF8P26080HSR3
MRF8P26080HR3 MRF8P26080HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2570
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 14 Watts Avg.
--1.3
--0.5
--0.7
--0.9
--1.1
16
15.5
--50
45
40
35
30
--25
--30
--35
--40
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
G
ps
,P
OWER
GAIN
(d
B) 14.5
13.5
12.5
11.5
2590
2610
2630
2650
2670
2690
2710 2730
25
--45
--1.5
AC
PR
(d
Bc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--70
--20
--30
--40
--60
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--50
IM3--U
IM3--L
IM5--U IM5--L
IM7--L
IM7--U
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
Pout, OUTPUT POWER (WATTS)
--2
--4
--6
15
--1
--3
--5
OU
TPU
T
CO
MPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
5
25
35
10
70
60
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--1dB = 15.5W
--2dB = 20.5W
--3dB = 26.5W
55
ηD
ACPR
PARC
AC
PR
(d
Bc)
--40
--10
--15
--20
--30
--25
--35
17
G
ps
,P
OWER
GAIN
(d
B)
16
15
14
13
12
11
Gps
15
14
13
12
11
VDD =28 Vdc,IDQA = 300 mA, VGSB =1.3 Vdc
f = 2595 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
PA
RC
(d
B)
PARC
VDD =28 Vdc,Pout =14 W (Avg.)
IDQA = 300 mA, VGSB =1.3 Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
VDD =28 Vdc,Pout = 12 W (PEP), IDQA = 300 mA
VGSB = 1.3 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2595 MHz
45
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