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参数资料
| 型号： | MRF8P26080HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 9/14页 |
| 文件大小： | 563K |
| 代理商： | MRF8P26080HSR3 |
4
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
Figure 2. MRF8P26080HR3(HSR3) Test Circuit Component Layout
CUT
OUT
A
REA
VGA
C
P
C17
R2
VGB
C9
C1
C2
R3
C3
C4
C10
R1
Z1
C12
C18
C14
C8
C16
C15
C7
C6
C5
C13
C11
MRF8S26080H
Rev. 3A
VDA
VDB
Table 5. MRF8P26080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3, C4, C5, C6, C7, C8
22 pF Chip Capacitors
ATC600F220JT250XT
ATC
C9, C10
3.3 μF, 50 V Chip Capacitors
GRM32DR71H335KA88B
Murata
C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C13, C14
4.7 μF, 50 V Chip Capacitors
GRM31CR71H475KA12L
Murata
C15, C16
0.6 pF Chip Capacitors
ATC600F0R6BT250XT
ATC
C17, C18
330 μF, 35 V Electrolytic Capacitors
MCGPR35V337M10x16--RH
Multicomp
R1
50 , 8 W Chip Resistor
060120A15Z50--2
Anaren
R2, R3
4.75 , 1/4 W Chip Resistors
CRCW12064R75FNEA
Vishay
Z1
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
GSC356--HYB2500
Soshin
PCB
0.020″, εr =3.5
RF35A2
Taconic
4
λ
2
λ
2
λ
4
λ
2
λ
2
λ
Single--ended
Quadrature combined
Doherty
Push--pull
4
λ
4
λ
4
λ
4
λ
Figure 3.
Possible Circuit Topologies
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PDF描述 |
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| MRF8P26080HR3 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P26080HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.6GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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