- 您现在的位置：买卖IC网 > PDF目录21725 > MRF8S18120HR3 (Freescale Semiconductor)MOSFET RF N-CH 120W NI-780 PDF资料下载
参数资料
| 型号： | MRF8S18120HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/14页 |
| 文件大小： | 409K |
| 描述： | MOSFET RF N-CH 120W NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 72W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
MRF8S18120HR3 MRF8S18120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequen-
cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
?
Typical GSM Performance: VDD
=28Volts,IDQ
= 800 mA, Pout
=
72 Watts CW
Frequency
Gps
(dB)
ηD
(%)
1805 MHz
18.2
49.8
1840 MHz
18.6
51.4
1880 MHz
18.7
53.9
?
Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
?
Typical Pout
@ 1 dB Compression Point
?
120 Watts CW
?
Typical GSM EDGE Performance: VDD
=28Volts,IDQ
= 800 mA, Pout
=
46 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.9
41.0
-- 6 4
-- 7 6
1.6
1840 MHz
18.2
41.9
-- 6 3
-- 7 6
1.7
1880 MHz
18.3
43.2
-- 6 1
-- 7 6
2.0
Features
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
?
Internally Matched for Ease of Use
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
?
Optimized for Doherty Applications
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S18120H
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
1805--1880 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S18120HR3
MRF8S18120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S18120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S18120HSR3
?
Freescale Semiconductor, Inc., 2009--2010.
All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| C3391-33.333 | OSC 33.333 MHZ 3.3V +/-25PPM SMD |
| FCN2420G333J-B | CAP FILM 0.033UF 400VDC 2420 |
| WMC08S18K | CAP FILM 0.018UF 80VDC AXIAL |
| MIN02-002DC470J-F | CAP MICA 47PF 300V 5% SMD |
| MRF8S21120HR3 | FET RF N-CH 2.1GHZ 28V NI780H |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S18120HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S18120HR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18210WGHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。