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参数资料
| 型号： | MRF8S18120HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/14页 |
| 文件大小： | 409K |
| 描述： | MOSFET RF N-CH 120W NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 800mA |
| 功率 - 输出： | 72W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
14Rev. 1, 10/2010
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
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Document Number: MRF8S18120H
相关PDF资料 |
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| WMC08S18K | CAP FILM 0.018UF 80VDC AXIAL |
| MIN02-002DC470J-F | CAP MICA 47PF 300V 5% SMD |
| MRF8S21120HR3 | FET RF N-CH 2.1GHZ 28V NI780H |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S18120HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S18120HR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18120HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18210WGHSR3 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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