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| 型号： | MRF8S19260HSR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/14页 |
| 文件大小： | 504K |
| 描述： | FET RF N-CH 1.9GHZ 30V NI1230S-8 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.99GHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 30V |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 74W |
| 电压 - 额定： | 65V |
| 封装/外壳： | SOT-1110B |
| 供应商设备封装： | NI1230S-8 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S19260HR6 MRF8S19260HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=30Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 400
μAdc)
VGS(th)
1.1
1.8
2.6
Vdc
Gate Quiescent Voltage
(VDS
=30Vdc,ID
= 1600 mAdc)
VGS(Q)
?
3.1
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
=30Vdc,ID
= 1600 mAdc, Measured in Functional Test)
VGG(Q)
4.5
5.2
6.0
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=4.0Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) VDD
=30Vdc,IDQ
= 1600 mA, Pout
= 74 W Avg., f = 1990 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
16.5
18.2
19.5
dB
Drain Efficiency
ηD
32.0
34.5
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.2
5.7
?
dB
Adjacent Channel Power Ratio
ACPR
?
--34.6
--31.5
dBc
Input Return Loss
IRL
?
-- 1 3
?
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=30Vdc,IDQ
= 1600 mA, Pout
=74WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz
17.6
33.2
5.9
--36.0
-- 9
1960 MHz
18.0
33.6
5.8
--35.7
-- 11
1990 MHz
18.2
34.5
5.7
--34.6
-- 1 3
1. VGG
=1.6xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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