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参数资料
| 型号： | MRF8S21120HR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/14页 |
| 文件大小： | 505K |
| 描述： | FET RF N-CH 2.1GHZ 28V NI780H |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 2.17GHz |
| 增益： | 17.6dB |
| 电压 - 测试： | 28V |
| 电流 - 测试： | 850mA |
| 功率 - 输出： | 28W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8S21120HR3 MRF8S21120HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 172
μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDS
=28Vdc,ID
= 850 mAdc)
VGS(Q)
?
2.6
?
Vdc
Fixture Gate Quiescent Voltage
(1)
(VDD
=28Vdc,ID
= 850 mAdc, Measured in Functional Test)
VGG(Q)
4.0
5.2
7.0
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.72Adc)
VDS(on)
0.1
0.16
0.3
Vdc
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 850 mA, Pout
= 28 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
17.0
17.6
20.0
dB
Drain Efficiency
ηD
32.5
34.0
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.4
?
dB
Adjacent Channel Power Ratio
ACPR
?
--37.6
--36.0
dBc
Input Return Loss
IRL
?
-- 1 3
-- 8
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 850 mA, Pout
=28WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.4
34.6
6.4
--37.5
-- 2 2
2140 MHz
17.5
34.1
6.5
--38.0
-- 1 8
2170 MHz
17.6
34.0
6.4
--37.6
-- 1 3
1. VGG
=2xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S21120HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S21120HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S21120HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S21140HR3 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S21140HR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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