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| 型号： | MRF8S8260HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 576K |
| 代理商： | MRF8S8260HR3 |
MRF8S8260HR3 MRF8S8260HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 790 to
895 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28 Volts,IDQ =
1500 mA, Pout = 70 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
850 MHz
21.3
36.2
6.5
--37.0
875 MHz
21.4
37.4
6.3
--36.7
895 MHz
21.1
37.5
6.2
--36.9
Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point
260 Watts CW (1)
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 16.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
201
0.94
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 83°C, 70 W CW, 28 Vdc, IDQ = 1500 mA, 895 MHz
Case Temperature 80°C, 260 W CW(1),28Vdc,IDQ = 1500 mA, 895 MHz
RθJC
0.36
0.31
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S8260H
Rev. 0, 1/2011
Freescale Semiconductor
Technical Data
850--895 MHz, 70 W AVG. 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S8260HR3
MRF8S8260HSR3
CASE 465C--02, STYLE 1
NI--880S
MRF8S8260HSR3
CASE 465B--03, STYLE 1
NI--880
MRF8S8260HR3
Freescale Semiconductor, Inc., 2011. All rights reserved.
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相关代理商/技术参数 |
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| MRF8S8260HR5 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S8260HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S8260HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9100HR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 100W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9100HR3_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
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