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| 型号： | MRF8S9100HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/14页 |
| 文件大小： | 484K |
| 描述： | MOSFET RF N-CH 100W NI-780 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS |
| 频率： | 920MHz |
| 增益： | 19.3dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 72W |
| 电压 - 额定： | 70V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF8S9100HR3 MRF8S9100HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW, 28 Vdc, IDQ
= 500 mA
Case Temperature 81°C, 72 W CW, 28 Vdc, IDQ
= 500 mA
Case Temperature 82°C, 45 W CW, 28 Vdc, IDQ
= 700 mA
RθJC
0.60
0.65
0.69
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=70Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 460
μAdc)
VGS(th)
1.4
2.2
2.9
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 500 mAdc, Measured in Functional Test)
VGS(Q)
2.1
2.9
3.6
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1.7Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 500 mA, Pout
=72WCW,f=920MHz
Power Gain
Gps
18
19.3
23
dB
Drain Efficiency
ηD
50
51.6
?
%
Input Return Loss
IRL
?
--12.4
-- 9
dB
Pout
@ 1 dB Compression Point, CW
P1dB
100
?
?
W
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 500 mA, Pout
=72WCW
Frequency
Gps
(dB)
ηD
(%)
IRL
(dB)
920 MHz
19.3
51.6
--12.4
940 MHz
19.3
52.9
--14.3
960 MHz
19.1
54.1
--12.2
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally input matched.
(continued)
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| MRF8S9100HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 100W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9100HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 100W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9102NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 50W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9120NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHZ 120W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S9170NR3 | 功能描述:射频MOSFET电源晶体管 HV8 900MHz 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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