参数资料
型号: MRF9060MBR1
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封装: PLASTIC, CASE 1337-03, 2 PIN
文件页数: 4/12页
文件大小: 422K
代理商: MRF9060MBR1
MRF9060MR1 MRF9060MBR1
4
MOTOROLA RF DEVICE DATA
Figure 1. 930–960 MHz Broadband Test Circuit Schematic
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060
x 0.520
Microstrip
0.360
x 0.270
Microstrip
0.060
x 0.270
Microstrip
0.130
x 0.060
Microstrip
0.300
x 0.060
Microstrip
0.210
x 0.060
Microstrip
0.600
x 0.060
Microstrip
0.290
x 0.060
Microstrip
0.340
x 0.060
Microstrip
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240
x 0.060
Microstrip
0.240
x 0.060
Microstrip
0.500
x 0.100
Microstrip
0.100
x 0.270
x 0.080
, Taper
0.330
x 0.270
Microstrip
0.120
x 0.270
Microstrip
0.270
x 0.520
x 0.140
, Taper
0.240
x 0.520
Microstrip
0.340
x 0.520
Microstrip
Table 1. 930–960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8–8.0 Gigatrim Variable Capacitors
11 pF Chip Capacitors, B Case (MRF9060MR1)
10 pF Chip Capacitors, B Case (MRF9060MBR1)
95F786
95F787
100B470JP 500X
44F3360
100B110JP 500X
100B100JP 500X
Newark
Newark
ATC
Newark
ATC
C6, C15, C16
C8, C9
C10
C12
C17
L1, L2
N1, N2
WB1, WB2
Board Material
PCB
10 F, 35 V Tantalum Chip Capacitors
10 pF Chip Capacitors, B Case
3.9 pF Chip Capacitor, B Case
1.7 pF Chip Capacitor, B Case
220 F Electrolytic Chip Capacitor
12.5 nH Inductors
N–Type Panel Mount, Stripline
15 mil Brass Wear Blocks
30 mil Glass Teflon
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
93F2975
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
A04T–5
3052–1648–10
Newark
Newark
ATC
ATC
Newark
Coilcraft
Avnet
RF–35–0300
TO–270/TO–272 Surface/Bolt
Taconic
DSelectronics
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MRF9060NR1 功能描述:射频MOSFET电源晶体管 60W 1GHZ FET TO-270 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9060NR1_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF9060R1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs