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参数资料
| 型号： | MRF9080 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 128K 3.3 VOLT SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-780, CASE 465-06, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 439K |
| 代理商： | MRF9080 |
5
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
MOTOROLA RF DEVICE DATA
Figure 3. Broadband GSM 900 Optimized Demo Board Schematic
Table 2. Broadband GSM 900 Optimized Demo Board Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1
C2
C3, C15
C4, C6
C5
C7, C8
C9
C10, C11
C12, C13
C14
P1
R1
R2
R3
R4
R5, R6
T1
U1
4.7 pF Chip Capacitor, ACCU–P (0805)
3.9 pF Chip Capacitor, ACCU–P (0805)
22 pF Chip Capacitors, ACCU–P (0805)
22 F, 35 V Tantalum Chip Capacitors
1.0 F Chip Capacitor, ACCU–P (0805)
5.6 pF Chip Capacitors, ACCU–P (0805)
220 F, 63 V Electrolytic Capacitor
3.3 pF Chip Capacitors, ACCU–P (0805)
2.2 pF Chip Capacitors, ACCU–P (0805)
4.7 pF Chip Capacitor
5.0 k
Potentiometer CMS Cermet Multi–turn
10
, 1/8 W Chip Resistor (0805)
1.0 k
, 1/8 W Chip Resistor (0805)
1.2 k
, 1/8 W Chip Resistor (0805)
2.2 k
, 1/8 W Chip Resistor (0805)
1.0 k
, 1/8 W Chip Resistors (0805)
Bipolar NPN Transistor, SOT–23
Voltage Regulator, Micro–8
RF Connectors, Type SMA
Substrate = Taconic RF35, Thickness 0.5 mm
#08051J3R9CBT
#08051J3R9CBT
#08051J221
#T491X226K035AS4394
#08053G105ZATEA
#08051J5R18CBT
AVX
AVX
AVX
Kemet
AVX
AVX
#08051J8R2CBT
#08051J2R2CBT
#100B
#3224W
AVX
AVX
ATC
Bourns
#BC847ALT1
#LP2951ACDM–5.0R2
#R125510001
ON Semiconductor
ON Semiconductor
Radial
相关PDF资料 |
PDF描述 |
|---|---|
| MRF9100 | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100R3 | GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100SR3 | 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor |
| MRF9482T1 | RF MOSFETS(RF MOS场效应管) |
| MRF949T1 | Low Noise Transistor(低噪声晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9080LR3 | 功能描述:射频MOSFET电源晶体管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9080LR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF9080LR5 | 功能描述:射频MOSFET电源晶体管 75W 960MHZ 26V NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF9080LSR3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9080R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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