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参数资料
| 型号： | MRF917T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | LOW NOISE HIGH FREQUENCY TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/12页 |
| 文件大小： | 252K |
| 代理商： | MRF917T1 |
MRF917T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0 mA)
V(BR)CEO
12
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
20
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
2.0
—
—
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
—
50
nA
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 30 mA)
hFE
40
—
200
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
0.54
—
pF
Current–Gain Bandwidth Product
(VCE = 6.0 Vdc, IC = 20 mA, f = 1.0 GHz)
f
τ
—
6.0
—
GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
500 MHz
1.0 GHz
NFmin
—
—
1.7
2.3
—
—
dB
Associated Gain at Minimum Noise Figure
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1
500 MHz
1.0 GHz
GNF
—
—
15.4
10
—
—
dB
Maximum Unilateral Gain
(VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz)
GUmax
—
12
—
dB
Insertion Gain
(VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz)
|S212|
—
11.2
—
dB
Noise Resistance
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)
RN
—
15
—
Ohms
Figure 1. Functional Circuit Schematic
VBE
VCE
DUT
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER
*BIAS
NETWORK
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**
SF – 11N < 1 GHz
**
SF – 31IN
≥
1 GHz
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